STT-MRAM Heat Sink and Magnetic Shield Structure Design for More Robust Read/Write Performance

ABSTRACT

An STT-MRAM device incorporating a multiplicity of MTJ junctions is encapsulated so that it dissipates heat produced by repeated read/write processes and is simultaneously shielded from external magnetic fields of neighboring devices. In addition, the encapsulation layers can be structured to reduced top lead stresses that have been shown to affect DR/R and Hc. We provide a device design and its method of fabrication that can simultaneously address all of these problems.

PRIORITY DATA

The present application is a continuation application of U.S. patentapplication Ser. No. 17/107,409, filed Nov. 30, 2020, which is adivisional application of U.S. patent application Ser. No. 15/857,782,filed Dec. 29, 2017, each of which is hereby incorporated by referencein its entirety.

BACKGROUND 1. Technical Field

This disclosure relates generally to magnetic storage devices,specifically to STT-MRAM (Spin Torque Transfer-Magnetic Random AccessMemory) devices and methods to improve their thermal stability.

2. Description of the Related Art

STT-MRAM is becoming an increasingly promising candidate for futuregeneration non-volatile working memory to replace embedded flash memoryand embedded SRAM (Static Random Access Memory). However, there arechallenges in scaling down this technology to 20 nm (nanometers)dimensions and beyond. One such challenge is to enhance the thermalstability of smaller MTJ (magnetic tunneling junction) devices, which isone type of storage cell employed in MRAM. Studies have reported thatself-heating of the MTJ junction occurs during read/write cycles (see,for example, S. Chatterjee, S. Salahuddin, S. Kumar, and S.Mukhopadhyay, IEEE Transactions on Electron Device, Vol. 59. No. 3,March 2012; Y. Wang, H. Cal, L. Naviner, Y. Zhang, X. Zhao, E. Deng, J.Klein, and W. Zhao, IEEE Transaction on Electron Device, Vol. 63, No. 4.April 2016; W. Guo, G. Prenat, V. Javerliac, M. Baraji, N. Mestier, C.Baraduc, B. Dieny, Journal of Physics D: Applied Physics, IOP, 2010,43(21), pp. 215001.)

Self-heating is expected to become even more of a problem as bothread/write speed and pattern density increase. On the one hand,self-heating can help reduce the switching current but on the other handit can also reduce the device thermal stability and even the devicereliability. Another challenge for STT-MRAM is the switching disturbancecaused by stray magnetic fields from neighboring devices. These andother problems, such as undesirable stresses, related to STT-MRAMoperation have been considered in the prior art, for example, in all ofthe following:

-   U.S. Patent: 20150091109 (Allinger et al.)-   U.S. Pat. No. 9,024,399 (Guo)-   U.S. Pat. No. 7,262,069 (Chung et al.)-   U.S. Patent Application 2007/0058422 (Phillips et al.)-   U.S. Pat. No. 8,194,436 (Fukami et al.)-   U.S. Pat. No. 9,081,669 (Tadepalli et al.)-   U.S. Pat. No. 8,125,057 (Bonin et al.)-   U.S. Pat. No. 7,829,980 (Molla et al.)-   U.S. Patent Application 2006/0273418 (Chung et al.)

It would indeed be desirable to effectively address the problems ofself-heating, thermal stability, stresses and switching disturbances. Ifthese problems can be addressed in a combined and efficient manner, itwould be even more advantageous. Although the prior arts indicated abovehave discussed these problems, they have not addressed them in ascomprehensive, effective and efficient a manner as in this disclosure.

SUMMARY

A first object of the present disclosure is to provide a method ofprotecting STT-MRAM devices from adverse thermal effects such as thoseresulting from self-heating induced by read/write operations.

A second object of the present disclosure is to provide a method toprotect STT-MRAM devices from adverse switching effects due to themagnetic fields of neighboring devices.

A third object of the present disclosure is to provide a mechanism forreduction of stress within certain areas of the STT-MRAM device that isa result of the adverse thermal effects.

A fourth object of this disclosure is to use the same heat sink designto serve as a stress buffer for an MTJ device.

A fifth object of the present disclosure is to provide such a methodthat is able to simultaneously produce all of the above objects.

These objects will be achieved through the design and fabrication of aheat sink structure for STT-MRAM devices that will improve STT-MRAMdevice thermal stability. This heat sink structure will simultaneouslyserve as a magnetic shield and stress buffer for magnetic devices. Aninternal study has shown that top lead stress can affect DR/R and Hc.FIG. 1 shows these results. We are therefore provided with empiricalevidence that the same heat sink design can also serve as a stressbuffer for an MTJ device, where the stress includes intrinsic filmtensile and compressive stresses plus the stress induced by differentialexpansion/contraction between the BIT line and the overall stack.

The present disclosure provides a design for a heat sink structure andits method of fabrication for an MTJ device, such as an MTJ device thatcan be integrated into a STT-MRAM device, so that the heat generatedduring the read/write cycle of such an MTJ device can be dissipated awaymuch more quickly than occurs in an MTJ device that is fabricated usingcurrent methods. As a result, the MTJ device so designed and fabricatedhas its read/write reliability improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a-1 b display data that indicate how top lead stress can affectboth DR/R and Hc.

FIG. 2 is a table (Table 1) listing the layer names and their functionscorresponding to the “old” MTJ fabrication scheme illustrated in FIG. 4a-4 e and currently in use.

FIG. 3 is a table (Table 2) listing the process flow steps correspondingto the fabrication scheme illustrated in FIG. 4 a -4 e.

FIG. 4 a-4 e is a schematic illustration showing the present magnetictunneling junction (MTJ) structure and the fabrication process utilizedto fabricate it.

FIG. 5 is a table (Table 3) listing the layer names and their functionscorresponding to the presently disclosed fabrication scheme illustratedin FIG. 7 a-7 f.

FIG. 6 is a table (Table 4) listing the process flow steps correspondingto the presently disclosed fabrication scheme illustrated in FIG. 7 a -7f.

FIG. 7 a-7 f is a set of schematic illustrations showing the presentlydisclosed magnetic tunneling junction structure and the fabricationprocess utilized to fabricate it.

FIG. 8 a-8 d are a set of schematic illustrations showing an alternativemagnetic tunneling junction (MTJ) structure providing equivalentproperties to that shown in FIG. 7 a-7 f and the fabrication processutilized to fabricate it.

DETAILED DESCRIPTION

FIG. 2 illustrates a current integration scheme (i.e., prior art) usedto fabricate an MTJ junction for an integrated MTJ device comprising amultiplicity of individually formed and encapsulated junctions. Suchdevices can be used to form STT-MRAM logic devices. The layer names andgeneral process integration steps are listed in Table 1 (FIG. 2 ) andTable 2 (FIG. 3 ) respectively. In the current method, the first step isto deposit the basic unpatterned MTJ film stack and the etch-stop hardmasks deposition within them that are used to pattern the stack into amultiplicity of smaller stacks so they can be integrated into a largerdevice.

Referring to the table shown in FIG. 2 and the corresponding schematicillustration of FIG. 4 a , we see that the film stack deposition is aseries of 5 layers, 14-10, where 10 is a pin layer, 11 is a barrierlayer, 12 is a free layer, 13 is a first hard mask layer, such as Ta,TiN or other conductive material and 14 is a second hard mask layer suchas the non-conductive material SiON, or the conductive material TiN.Layers 13 and 14 can be deposited using the same tool that deposits10-12, or it can be deposited using a different tool. Note that thestack is assumed to be formed on an appropriate substrate such as aconducting bottom electrode (BE) so that when all the processing stepsare completed the fabricated device can be easily integrated intodesired circuitry.

According to the process steps listed in the table of FIG. 3 and thecorresponding illustration in FIG. 4 b , step 2 is the deposition of aphoto-resist pattern layer, 15, on layer 14. Step 3 is to etch the MTJdeposition, leading to the two separate stacks shown in FIG. 4 c . Note,in this description and those to follow we show an initial MTJ stackpatterned into two separate stacks. For clarity, the two stacks areshown as isolated, it is assumed, of course, that they are resting onsome substrate, but the substrate is not shown in the figure. Theexample of two stacks is arbitrary and chosen for simplicity and anynumber of stacks can be processed using these methods.

Step 4 is the deposition of an encapsulation layer (16 in FIG. 4 d )which is a layer of dielectric material such as SiN, SiO2, Al₂O₃, MgO,or the like, deposited to a thickness of between approximately 20-200 Ato protect the patterned MTJ stacks. The encapsulation layer also coversthe substrate on which the stacks rest and which is not shown in FIG. 7c . This encapsulation layer, 16, can be deposited in-situ in the sametool that is used to etch the MTJ device or it can be deposited using aseparate tool. This encapsulation layer is normally a dielectricmaterial such as SiN, SiO2, Al2O3, MgO, or the like. This encapsulationlayer can also be deposited initially as a metal layer and then beoxidized into a dielectric layer. The functionality of thisencapsulation layer is not only to insulate the MTJ device fromshorting, but also to preserve the magnetic properties and thermalstability of each MTJ device. Therefore, the selection of materials forthis layer cannot be some random choice among dielectric materials.

Referring finally to FIG. 4 e , there is shown step 5, which is tofabricate the connection of a BIT line, shown as 18, to the MTJ device.This is normally done by first depositing a space-filling interlayerdielectric film (ILD), shown as 17, and then doing chemical mechanicalpolishing (CMP) to planarize and open the MTJ device. Finally the BITline 18 is formed to connect to the MTJ. Note that the CMP processremoves the upper surface of the encapsulation layer 16 as well assecond hard mask, 14, which opens the device to enable an electricalcontact between the metal BIT line and first hard mask, 13. Note thatthe BIT line is normally formed by a dual Cu-damascene process that iswell known in the art and will not be described herein.

The encapsulation layer, 16, normally has very low thermal conductivity.The interlayer dielectric material 17 also has very low thermalconductivity. The candidates for layer 17 are often SiN and SiO2. Due tothe low thermal conductivities of the encapsulation layer and the ILDlayer, the majority of the heat generated during read/write processes ofthe completed devices can only be dissipated by passing through theinterface between MTJ and BIT line, 130, or the interface between theMTJ and BE (bottom electrode), 140. As the MTJ size decreases, theinterface area between MTJ and BIT line and between the MTJ and BE alsodecreases. As a result, these interfaces become less efficient indissipating heat, which can become an even worse problem as theread/write speed increases.

FIG. 7 a-7 f illustrate the new integration scheme for fabricating a MTJdevice that will meet the objects described herein. The table in FIG. 5and the table in FIG. 6 list the layer descriptions and process stepsrespectively for ease of discussion. The key differences between thecurrently used (prior art) method just described and illustrated in FIG.4 a-4 e and the new method about to be described, are step 4 and step 5of Table 4, and their corresponding illustrations in FIG. 7 d-7 e . InStep 4 shown in FIG. 7 d , instead of depositing the single layer ofencapsulation dielectric, 16, as in FIG. 4 d of the prior art method,two additional encapsulation layers, 19 and 20 are added to augmentlayer 16, which is still deposited to a thickness between approximately20-200 A. The second encapsulation layer (19 in FIG. 7 d ) is typicallya layer of metallic material (electrically conductive or non-conductiveand possibly magnetic) with high thermal conductivity, deposited to athickness of between approximately 20-100 A, which will act as a heatsink layer. The third encapsulation layer, 20 in FIG. 7 d , is a hardmask layer formed of SiO₂ or SiN to a thickness of between approximately50-300 A which is to be used for patterning layer 19. The process forpatterning layer 19 (Step 5 shown in FIG. 7 e ) is normally done by acommonly used self-alignment spacer etching method using layer 20 as ahard mask to align the etch, which is guided so that it stops at layer16 and leaves pieces of layers 20 and 19 along the sidewalls. Note thatthe etch is a RIE etch of good selectivity between layers 19/20 andlayer 16. An alternative etch scheme that uses different gasses can beused after the etch of layer 20, in which case layers 20 and 16 can beformed of the same dielectric materials. After the etch, layer 19 willbe isolated from the MTJ etch device. Each individual layer 19, whenpatterned, will act like a small “bell jar” to surround each MTJ device.Layer 19 will subsequently act as a heat sink layer. After layer 19layer is patterned in step 5 (FIG. 7 e ), an ILD layer 17 will bedeposited (step 6 of FIG. 7 f ) and followed with a CMP process to openboth the heat sink layer, 19, and the MTJ device 13 at the same time.After that, a similar process like step 5 in FIG. 4 e (prior art method)will be used to fabricate a BIT line (18 of FIG. 7 f ) to electricallyconnect to the MTJ and layer 19. Note that the etch process has removedlayers 19 and 20 from all but the sides of the two patterned MTJ stacks,while the CMP process removes the tops of layer 16 and all of layer 14so the BIT line connection can be made.

When magnetic permeable material (such as NiFe, etc.) is used for layer19, this layer can then be used as magnetic shield to absorb the straymagnetic flux from adjacent devices and protect the MTJ device.Depending on the magnetic material selection (it should have goodthermal conductivity), this structure can serve both as a heat sink andas a magnetic shield. At the same time, the surrounding stress on theMTJ device can be modulated by inserting a layer 19 that is formed ofmaterials of different elastic constants.

Referring next to schematic FIG. 8 a-8 d , there is illustrated anddescribed (using the steps in the table of FIG. 6 ) an alternativedesign (second embodiment) of a heat sink and magnetically shielded MTJdevice that also meets the described objects set forth above.

FIG. 8 a-8 d schematically illustrates this second embodiment of themethod which begins where step 3, shown in FIG. 7 c , ends. We assumethat steps 1,2 and 3 of this second embodiment are identical to thosethree steps previously illustrated in FIG. 7 a-7 c and described intable of FIG. 6 . FIG. 8 a now immediately follows the structure shownin FIG. 7 c and shows an encapsulation process that replaces that inFIG. 7 d and which was described as step 4 in the table of FIG. 6 . InFIG. 8 a of this alternate embodiment, the patterned MTJ stack of FIG. 7c has already been encapsulated by layer 16, which is now followed bysuccessive encapsulations of three additional layers, 19, 19 a and 20.Layer 19 is the heat sink layer and layer 19 a is the magnetic shield.These are now two different layers (19 and 19 a) which are both formedto thickness between 20-100 A, whereas previously a single layer couldserve as both the heat sink and magnetic shield layer if it was bothmagnetic and heat conducting. The deposition sequence order between 19and 19 a can be changed. But in whichever order they are deposited,these two layers are now patterned separately by first patterning layer19 using a self-aligned etch process, then depositing layer 19 a andetching it away using another photo-etch process.

FIG. 8 d shows an alternative approach to replace FIG. 8 c . Thedifference here is that the magnetic shield layer is patterned inseparate step that removes encapsulation layer 19 so that magneticshield layer 19 a now remains exposed on top of the MTJ stack where itcan contact the BIT line 18.

As is finally understood by a person skilled in the art, the detaileddescription given above is illustrative of the present disclosure ratherthan limiting of the present disclosure. Revisions and modifications maybe made to methods, materials, structures and dimensions employed informing and providing a thermally and magnetically shielded MTJ device,while still forming and providing such a structure in accord with thespirit and scope of the present invention as defined by the appendedclaims.

What is claimed is:
 1. A device comprising: a first magnetic tunnelingjunction (MTJ) stack; a first encapsulation layer disposed on a sidewallsurface of the first MTJ stack; a first magnetic shield layer disposedon the first encapsulation layer along the sidewall surface of the firstMTJ stack; a second encapsulation layer disposed on the firstencapsulation layer along the sidewall surface of the first MTJ stack; adielectric layer disposed directly on the first encapsulation layer, themagnetic shield layer and the second encapsulation layer such that thedielectric layer physically contacts the first encapsulation layer, themagnetic shield layer and the second encapsulation layer; and aconductive line disposed over the dielectric layer and electricallycoupled to the first MTJ stack.
 2. The device of claim 1, furthercomprising a second MTJ stack, wherein the first encapsulation layerextends continuously from the first MTJ stack to the second MTJ stack.3. The device of claim 1, wherein the first encapsulation layerphysically contacts the conductive line.
 4. The device of claim 3,wherein the first magnetic shield layer, the second encapsulation layerand the dielectric layer physically contact the conductive line.
 5. Thedevice of claim 1, wherein the first magnetic shield layer physicallycontacts the conductive line, the second encapsulation layer, the firstencapsulation layer and the first MTJ stack.
 6. The device of claim 5,wherein the magnetic shield layer is positioned between the conductiveline and the second encapsulation layer, the first encapsulation layerand the first MTJ stack thereby preventing the second encapsulationlayer, the first encapsulation layer and the first MTJ stack fromphysically contacting the conductive line.
 7. The device of claim 1,wherein the first encapsulation layer includes a dielectric material,wherein the first magnetic shield layer includes a first metal material,and wherein the second encapsulation layer includes a second metalmaterial that is different from the first metal material.
 8. The deviceof claim 1, wherein the second encapsulation layer is a first heatshield layer formed of a different material than the first magneticshield layer.
 9. A device comprising: a first magnetic tunnelingjunction (MTJ) stack; a first encapsulation layer disposed on the firstMTJ stack; a first heat shield layer disposed on the first encapsulationlayer; a first magnetic shield layer disposed on the first encapsulationlayer; a conductive feature disposed directly on the first heat shieldlayer, the first magnetic shield layer and the first MTJ stack; and aninterlayer dielectric fill layer extending continuously from a bottomsurface of the conductive feature to a top surface of the firstencapsulation layer, the top surface of the first encapsulation layerfacing the bottom surface of the conductive feature.
 10. The device ofclaim 9, wherein the conductive feature is further disposed directly onthe first encapsulation layer.
 11. The device of claim 9, wherein thefirst heat shield layer is disposed directly on the first encapsulationlayer, and wherein the first magnetic shield layer is disposed directlyon the first heat shield layer.
 12. The device of claim 9, wherein thefirst heat shield layer is disposed directly on the first magneticshield layer, and wherein the first magnetic shield layer is disposeddirectly on the first encapsulation layer.
 13. The device of claim 9,further comprising: a second MTJ stack spaced apart from the first MTJstack; the first encapsulation extending continuously from the first MTJstack to the second MTJ stack; a second heat shield layer disposed onthe first encapsulation layer that is disposed on the second MTJ stack;a second magnetic shield layer disposed on the first encapsulation layerthat is disposed on the second MTJ stack; the conductive featureextending continuously from the first MTJ stack to the second MTJ stack.14. The device of claim 13, wherein the first heat shield layer isdiscontinuous with respect to the second shield layer, and wherein thefirst magnetic shield layer is discontinuous with respect to the secondmagnetic shield layer.
 15. The device of claim 14, wherein theinterlayer dielectric fill layer interfaces with both the first heatshield layer and the first magnetic shield layer.
 16. A devicecomprising: a first magnetic tunneling junction (MTJ) stack and a secondMTJ stack; a first encapsulation layer disposed directly on the firstMTJ stack and the second MTJ such that the first encapsulation layerextends continuously from the first MTJ stack to the second MTJ stack; afirst heat shield layer disposed on the first MTJ stack and a secondheat shield layer disposed on the second MTJ stack; a first magneticshield layer disposed on the first MTJ stack and a second magneticshield layer disposed on the second MTJ stack; a conductive featuredisposed on and interfacing with the first and second heat shieldlayers, the first and second magnetic shield layers and the first andsecond MTJ stacks; and a dielectric fill layer extending continuouslyfrom a bottom surface of the conductive feature to a top surface of thefirst encapsulation layer, the top surface of the first encapsulationlayer facing the bottom surface of the conductive feature.
 17. Thedevice of claim 16, wherein the dielectric fill layer further extendscontinuously from the first heat shield layer to the second heat shieldlayer.
 18. The device of claim 16, wherein the dielectric fill layerfurther extends continuously from the first magnetic shield layer to thesecond magnetic shield layer.
 19. The device of claim 16, wherein thefirst encapsulation layer is formed of a material selected from thegroup consisting of SiN, SiO₂, Al₂O₃ and MgO, wherein the first heatshield layer is formed of a material selected from the group consistingof Ti, TiN, Cu, Ta, TaN, W, Al and AN, and wherein the first magneticshield layer is formed of a material selected from the group consistingof NiFe and CoFe.
 20. The device of claim 19, wherein the second heatshield layer is formed of the same material as the first heat shieldlayer, and wherein the second magnetic shield layer is formed of thesame material as the first magnetic shield layer.